Bi2O3掺杂和CIP对氧化锆离子电导率的影响

International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014) Pub Date : 2014-09-29 DOI:10.1109/OMEE.2014.6912356

E. Nesova, V. Barbashov, A. Jebel, Y. Komysa

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引用次数: 0

摘要

研究了Bi2O3掺杂和冷等静压(CIP)对ZrO2 + 10 mol. % Sc2O3 + 1 mol. % CeO2陶瓷离子电导率的影响。结果表明，Bi2O3掺杂陶瓷试样的烧结采用冷等静压后较低的温度(烧结温度小于400℃)。CIP和烧结制度(0.6 GPa;1100°C, 70 h)的样品产生高导电和致密的陶瓷(0.028 S cm-1, 800°C)。

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Effect of Bi2O3 doping and CIP on ionic conductivity of scandia ceria stabilized zirconia

Effect of Bi₂O₃ doping and cold isostatic pressing (CIP ) on the ionic conductivity of the ceramics ZrO₂ + 10 mol .% Sc₂O₃ + 1 mol. % CeO₂ was studied. It was established that sintering the Bi₂O₃ doped ceramic specimens uses the lower temperatures after cold isostatic pressing (value of the sintering temperature was less than 400°C). CIP and sintering regimes (0.6 GPa ; 1100°C at 70 h) of specimens yielded high conductive and dense ceramics (0.028 S cm^-1 at 800°C).

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International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)

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