130 nm SiGe BiCMOS ka波段功率放大器的热分析与设计

2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2023-01-22 DOI:10.1109/SiRF56960.2023.10046279

Alexander Haag, M. Kaynak, A. Ulusoy

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引用次数: 0

摘要

本文介绍了大规模硅基功率放大器(PAs)的设计和热挑战。作为一个例子，提出了一种采用铝后端线(BEOL)的130 nm硅锗(SiGe) BiCMOS的ka波段PA。它是一种基于伪差分变压器的设计，具有高效的2:1变压器，具有高阻抗转换比。PA在26%的功率附加效率(PAE)下实现23.2 dBm的Psat。本文提出并讨论了由于片上热效应而产生的不同结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Thermal Analysis and Design of a Ka-Band Power Amplifier in 130 nm SiGe BiCMOS

This paper presents the design and thermal challenges of large-scale silicon-based power amplifiers (PAs). As an example, a Ka-Band PA in 130 nm silicon germanium (SiGe) BiCMOS with an aluminum back end of line (BEOL) is presented. It is a pseudo differential transformer-based design featuring efficient 2:1 transformers for a high impedance transformation ratio. The PA achieves Psat of 23.2 dBm at 26 % power added efficiency (PAE). Differing results due to on-chip thermal effects are presented and discussed in this paper.

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2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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