Lu3(Ga,In) 5012:Eu3+外延薄膜的生长和发光性能

A. Luchechko, I. Syvorotka, Y. Zakharko, I. Syvorotka
{"title":"Lu3(Ga,In) 5012:Eu3+外延薄膜的生长和发光性能","authors":"A. Luchechko, I. Syvorotka, Y. Zakharko, I. Syvorotka","doi":"10.1109/OMEE.2014.6912384","DOIUrl":null,"url":null,"abstract":"High quality thin epitaxial films of Lu<sub>3</sub>(Ga,In)<sub>5</sub>O<sub>12</sub>:Eu<sup>3+</sup> with high effective atomic number were grown by liquid phase epitaxy method. Excitation and emission spectra of Lu<sub>3</sub>(Ga,In)<sub>5</sub>O<sub>12</sub>:Eu<sup>3+</sup> epitaxial films were studied under UV and X-ray excitations. The photo- and X-ray luminescence spectra of Eu<sup>3+</sup> ions in Lu<sub>3</sub>(Ga,In)<sub>5</sub>O<sub>12</sub>:Eu<sup>3+</sup> are characteristic to the f→f transition in the Eu<sup>3+</sup> ions that occupied dodecahedral sites in the garnet structure. The ratio of the bands intensities in luminescence spectra under different types of excitation was determined.","PeriodicalId":142377,"journal":{"name":"International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)","volume":"208 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Growth and luminescent properties of Lu3(Ga,In)5O12:Eu3+ epitaxial films\",\"authors\":\"A. Luchechko, I. Syvorotka, Y. Zakharko, I. Syvorotka\",\"doi\":\"10.1109/OMEE.2014.6912384\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High quality thin epitaxial films of Lu<sub>3</sub>(Ga,In)<sub>5</sub>O<sub>12</sub>:Eu<sup>3+</sup> with high effective atomic number were grown by liquid phase epitaxy method. Excitation and emission spectra of Lu<sub>3</sub>(Ga,In)<sub>5</sub>O<sub>12</sub>:Eu<sup>3+</sup> epitaxial films were studied under UV and X-ray excitations. The photo- and X-ray luminescence spectra of Eu<sup>3+</sup> ions in Lu<sub>3</sub>(Ga,In)<sub>5</sub>O<sub>12</sub>:Eu<sup>3+</sup> are characteristic to the f→f transition in the Eu<sup>3+</sup> ions that occupied dodecahedral sites in the garnet structure. The ratio of the bands intensities in luminescence spectra under different types of excitation was determined.\",\"PeriodicalId\":142377,\"journal\":{\"name\":\"International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)\",\"volume\":\"208 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMEE.2014.6912384\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEE.2014.6912384","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

采用液相外延法制备了具有高有效原子序数的Lu3(Ga,In)5O12:Eu3+薄膜。研究了Lu3(Ga,In)5O12:Eu3+外延薄膜在紫外和x射线激发下的激发和发射光谱。在Lu3(Ga, in)5O12:Eu3+中,Eu3+离子的光和x射线发光光谱特征为占据石榴石十二面体位置的Eu3+离子的f→f跃迁。测定了不同激发方式下发光光谱中各波段强度的比值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Growth and luminescent properties of Lu3(Ga,In)5O12:Eu3+ epitaxial films
High quality thin epitaxial films of Lu3(Ga,In)5O12:Eu3+ with high effective atomic number were grown by liquid phase epitaxy method. Excitation and emission spectra of Lu3(Ga,In)5O12:Eu3+ epitaxial films were studied under UV and X-ray excitations. The photo- and X-ray luminescence spectra of Eu3+ ions in Lu3(Ga,In)5O12:Eu3+ are characteristic to the f→f transition in the Eu3+ ions that occupied dodecahedral sites in the garnet structure. The ratio of the bands intensities in luminescence spectra under different types of excitation was determined.
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