20世纪20年代以数据为中心的计算的光掩模挑战

Photomask Japan Pub Date : 2021-08-23 DOI:10.1117/12.2607440
K. Schuegraf
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引用次数: 0

摘要

随着计算、存储和网络的显著增长,世界正迅速转向以数据为中心的计算模式。摩尔定律可以降低功耗,提高性能,减少每个晶体管的面积和成本,以支持以数据为中心的增长,这对掩模工艺,控制和计量提出了重大挑战。DUV光刻仍然是主力技术,并继续推动创新。目前正在开发多种解决方案,以解决与大模具需求相关的DUV掩模挑战。虽然预计未来几年DUV的生产将会很强劲,但EUV正在加快步伐,并在大批量生产中得到部署。EUV是一个充满改进和创新机会的环境,将继续推进这一旅程。EUV HiNA是光刻技术的重要一步,其中0.55 NA EUV光学器件将实现向10nm以下分辨率的转变。HiNA掩膜生态系统将通过将新创建的低NA EUV供应链发展到新的方向来适应。光掩膜环境将继续带来创造力,推动创新并获得商业回报。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Photomask challenges for data-centric computing in the 2020s
The world is rapidly shifting towards data-centric computing model with significant growth in compute, storage and networking. Moore’s law scaling to reduce power, improve performance and reduce area and cost per transistor to support data centric growth places significant challenges for photomask process, control, and metrology. DUV lithography continues to be workhorse technology and continues to drive innovation. Multiple solutions are being developed to solve DUV mask challenges associated with a big die requirement. While DUV production is being projected to be strong for next few years, EUV is picking up pace and being deployed in high volume manufacturing. EUV is an opportunity-rich environment for improvements and innovations that will continue to advance the journey. EUV HiNA is a major step in the lithography paradigm where 0.55 NA EUV optics will enable a shift to sub-10nm resolution. The HiNA mask ecosystem will adapt by growing the newly created low NA EUV supply chain into new directions. The photomask environment will continue to bring creativity, drive innovations and gain commercial rewards.
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