Min-Chuan Wang, Y. Chen, Ming-Hao Hsieh, W. Tsai, D. Jan
{"title":"集成近红外阻挡层的全固态电致变色器件,用于图像传感器和节能玻璃","authors":"Min-Chuan Wang, Y. Chen, Ming-Hao Hsieh, W. Tsai, D. Jan","doi":"10.1063/1.4962842","DOIUrl":null,"url":null,"abstract":"The all-solid-state electrochromic device (ECD) integrated with near-IR (NIR) blocking layer has been developed for image sensor and energy-saving glass application. The all-solid-state ECD integrated with NIR blocking layer could potentially control the transmittance from 70.5% to 17.5% at 550nm in the visible region and from 39% to 9% at the NIR wavelength larger than 1100nm. The NIR blocking all-solid-state ECD with the one substrate structure of NiO/Ta2O5/WO3/ ITO on NIR blocking transparent conductive oxide (TCO) coated glass was prepared at room temperature by reactive DC magnetron sputtering technique. With the application of ECDs, it is possible to directly apply the device onto an image sensor and energy-saving glass with the NIR rejection function even in the bleached state. Furthermore, the low resistance NIR blocking TCO also provided the lower power consumption in the switching cycle at voltages as low as 5 V, make ECDs the ideal components for battery powered applications.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"12 42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"All-solid-state electrochromic device integrated with near-IR blocking layer for image sensor and energy-saving glass application\",\"authors\":\"Min-Chuan Wang, Y. Chen, Ming-Hao Hsieh, W. Tsai, D. Jan\",\"doi\":\"10.1063/1.4962842\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The all-solid-state electrochromic device (ECD) integrated with near-IR (NIR) blocking layer has been developed for image sensor and energy-saving glass application. The all-solid-state ECD integrated with NIR blocking layer could potentially control the transmittance from 70.5% to 17.5% at 550nm in the visible region and from 39% to 9% at the NIR wavelength larger than 1100nm. The NIR blocking all-solid-state ECD with the one substrate structure of NiO/Ta2O5/WO3/ ITO on NIR blocking transparent conductive oxide (TCO) coated glass was prepared at room temperature by reactive DC magnetron sputtering technique. With the application of ECDs, it is possible to directly apply the device onto an image sensor and energy-saving glass with the NIR rejection function even in the bleached state. Furthermore, the low resistance NIR blocking TCO also provided the lower power consumption in the switching cycle at voltages as low as 5 V, make ECDs the ideal components for battery powered applications.\",\"PeriodicalId\":422453,\"journal\":{\"name\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"12 42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/1.4962842\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.4962842","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
All-solid-state electrochromic device integrated with near-IR blocking layer for image sensor and energy-saving glass application
The all-solid-state electrochromic device (ECD) integrated with near-IR (NIR) blocking layer has been developed for image sensor and energy-saving glass application. The all-solid-state ECD integrated with NIR blocking layer could potentially control the transmittance from 70.5% to 17.5% at 550nm in the visible region and from 39% to 9% at the NIR wavelength larger than 1100nm. The NIR blocking all-solid-state ECD with the one substrate structure of NiO/Ta2O5/WO3/ ITO on NIR blocking transparent conductive oxide (TCO) coated glass was prepared at room temperature by reactive DC magnetron sputtering technique. With the application of ECDs, it is possible to directly apply the device onto an image sensor and energy-saving glass with the NIR rejection function even in the bleached state. Furthermore, the low resistance NIR blocking TCO also provided the lower power consumption in the switching cycle at voltages as low as 5 V, make ECDs the ideal components for battery powered applications.