K. Nary, S. Beccue, R. Nubling, R. Pierson, Keh-Chung Wang, P. Zampardi, A. Jayaraman
{"title":"二阶/spl δ //spl σ /调制器采用AlGaAs/GaAs HBTS","authors":"K. Nary, S. Beccue, R. Nubling, R. Pierson, Keh-Chung Wang, P. Zampardi, A. Jayaraman","doi":"10.1109/GAAS.1994.636974","DOIUrl":null,"url":null,"abstract":"We have successfully demonstrated one-bit, second-order delta-sigma modulators in a 50 GHz (F/sub t/) AlGaAs/GaAs heterojunction bipolar transistor process. The integrated modulator, consisting of a low-pass single bit modulator, clock generators and output buffers, has attained an SNR of 37 dB at a sample rate of 2 Gs/s for an oversampling ratio of 20. The circuit dissipates 1.92 W. To our knowledge, these are the first reported HBT delta sigma modulators.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Second order /spl Delta//spl Sigma/ modulators using AlGaAs/GaAs HBTS\",\"authors\":\"K. Nary, S. Beccue, R. Nubling, R. Pierson, Keh-Chung Wang, P. Zampardi, A. Jayaraman\",\"doi\":\"10.1109/GAAS.1994.636974\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have successfully demonstrated one-bit, second-order delta-sigma modulators in a 50 GHz (F/sub t/) AlGaAs/GaAs heterojunction bipolar transistor process. The integrated modulator, consisting of a low-pass single bit modulator, clock generators and output buffers, has attained an SNR of 37 dB at a sample rate of 2 Gs/s for an oversampling ratio of 20. The circuit dissipates 1.92 W. To our knowledge, these are the first reported HBT delta sigma modulators.\",\"PeriodicalId\":328819,\"journal\":{\"name\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1994.636974\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636974","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Second order /spl Delta//spl Sigma/ modulators using AlGaAs/GaAs HBTS
We have successfully demonstrated one-bit, second-order delta-sigma modulators in a 50 GHz (F/sub t/) AlGaAs/GaAs heterojunction bipolar transistor process. The integrated modulator, consisting of a low-pass single bit modulator, clock generators and output buffers, has attained an SNR of 37 dB at a sample rate of 2 Gs/s for an oversampling ratio of 20. The circuit dissipates 1.92 W. To our knowledge, these are the first reported HBT delta sigma modulators.