{"title":"宽带共门低噪声放大器的分析与设计","authors":"A. Qassem, M. El-Nozahi, H. Ragai","doi":"10.1109/ICM.2014.7071823","DOIUrl":null,"url":null,"abstract":"This paper presents a comparison between several topologies of Wideband Common Gate Low Noise Amplifiers including conventional and multiple feedback topologies. The comparison is based on finding the best Figure of Merit (FOM) of the different architectures. Accordingly, the proposed design steps to yield the best FOM for each architecture are presented. This FOM shows the tradeoff between noise, nonlinearity, and power consumption. The comparison is verified using circuit level simulation in the 0.13 μm CMOS technology node. Results show that for a certain bias current, the FOM is appreciably enhanced. For the conventional common gate LNA with current reuse, the highest FOM is obtained in spite of its high noise figure compared to other architectures.","PeriodicalId":107354,"journal":{"name":"2014 26th International Conference on Microelectronics (ICM)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Analysis and design of wideband common-gate low noise amplifier\",\"authors\":\"A. Qassem, M. El-Nozahi, H. Ragai\",\"doi\":\"10.1109/ICM.2014.7071823\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a comparison between several topologies of Wideband Common Gate Low Noise Amplifiers including conventional and multiple feedback topologies. The comparison is based on finding the best Figure of Merit (FOM) of the different architectures. Accordingly, the proposed design steps to yield the best FOM for each architecture are presented. This FOM shows the tradeoff between noise, nonlinearity, and power consumption. The comparison is verified using circuit level simulation in the 0.13 μm CMOS technology node. Results show that for a certain bias current, the FOM is appreciably enhanced. For the conventional common gate LNA with current reuse, the highest FOM is obtained in spite of its high noise figure compared to other architectures.\",\"PeriodicalId\":107354,\"journal\":{\"name\":\"2014 26th International Conference on Microelectronics (ICM)\",\"volume\":\"80 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 26th International Conference on Microelectronics (ICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2014.7071823\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 26th International Conference on Microelectronics (ICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2014.7071823","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis and design of wideband common-gate low noise amplifier
This paper presents a comparison between several topologies of Wideband Common Gate Low Noise Amplifiers including conventional and multiple feedback topologies. The comparison is based on finding the best Figure of Merit (FOM) of the different architectures. Accordingly, the proposed design steps to yield the best FOM for each architecture are presented. This FOM shows the tradeoff between noise, nonlinearity, and power consumption. The comparison is verified using circuit level simulation in the 0.13 μm CMOS technology node. Results show that for a certain bias current, the FOM is appreciably enhanced. For the conventional common gate LNA with current reuse, the highest FOM is obtained in spite of its high noise figure compared to other architectures.