宽带共门低噪声放大器的分析与设计

A. Qassem, M. El-Nozahi, H. Ragai
{"title":"宽带共门低噪声放大器的分析与设计","authors":"A. Qassem, M. El-Nozahi, H. Ragai","doi":"10.1109/ICM.2014.7071823","DOIUrl":null,"url":null,"abstract":"This paper presents a comparison between several topologies of Wideband Common Gate Low Noise Amplifiers including conventional and multiple feedback topologies. The comparison is based on finding the best Figure of Merit (FOM) of the different architectures. Accordingly, the proposed design steps to yield the best FOM for each architecture are presented. This FOM shows the tradeoff between noise, nonlinearity, and power consumption. The comparison is verified using circuit level simulation in the 0.13 μm CMOS technology node. Results show that for a certain bias current, the FOM is appreciably enhanced. For the conventional common gate LNA with current reuse, the highest FOM is obtained in spite of its high noise figure compared to other architectures.","PeriodicalId":107354,"journal":{"name":"2014 26th International Conference on Microelectronics (ICM)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Analysis and design of wideband common-gate low noise amplifier\",\"authors\":\"A. Qassem, M. El-Nozahi, H. Ragai\",\"doi\":\"10.1109/ICM.2014.7071823\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a comparison between several topologies of Wideband Common Gate Low Noise Amplifiers including conventional and multiple feedback topologies. The comparison is based on finding the best Figure of Merit (FOM) of the different architectures. Accordingly, the proposed design steps to yield the best FOM for each architecture are presented. This FOM shows the tradeoff between noise, nonlinearity, and power consumption. The comparison is verified using circuit level simulation in the 0.13 μm CMOS technology node. Results show that for a certain bias current, the FOM is appreciably enhanced. For the conventional common gate LNA with current reuse, the highest FOM is obtained in spite of its high noise figure compared to other architectures.\",\"PeriodicalId\":107354,\"journal\":{\"name\":\"2014 26th International Conference on Microelectronics (ICM)\",\"volume\":\"80 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 26th International Conference on Microelectronics (ICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2014.7071823\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 26th International Conference on Microelectronics (ICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2014.7071823","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本文对几种宽带共门低噪声放大器拓扑结构进行了比较,包括常规拓扑结构和多反馈拓扑结构。比较的基础是找到不同架构的最佳优值(FOM)。因此,提出了针对每种体系结构产生最佳FOM的建议设计步骤。这个FOM显示了噪声、非线性和功耗之间的权衡。在0.13 μm CMOS工艺节点上,通过电路级仿真验证了这一对比。结果表明,在一定偏置电流下,FOM明显增强。对于电流复用的传统共门LNA,尽管噪声系数较高,但与其他结构相比,FOM最高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis and design of wideband common-gate low noise amplifier
This paper presents a comparison between several topologies of Wideband Common Gate Low Noise Amplifiers including conventional and multiple feedback topologies. The comparison is based on finding the best Figure of Merit (FOM) of the different architectures. Accordingly, the proposed design steps to yield the best FOM for each architecture are presented. This FOM shows the tradeoff between noise, nonlinearity, and power consumption. The comparison is verified using circuit level simulation in the 0.13 μm CMOS technology node. Results show that for a certain bias current, the FOM is appreciably enhanced. For the conventional common gate LNA with current reuse, the highest FOM is obtained in spite of its high noise figure compared to other architectures.
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