在GaAs衬底上具有InAs-InGaAs量子点活性区的垂直腔面发射激光器，发射速度为1.3 /spl mu/m

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI:10.1109/ISLC.2000.882265

J. Lott, V. Ustinov, N. Maleev, A. Zhukov, M. Maximov, B. V. Volovik, Z. Alferov, D. Bimberg

{"title":"在GaAs衬底上具有InAs-InGaAs量子点活性区的垂直腔面发射激光器，发射速度为1.3 /spl mu/m","authors":"J. Lott, V. Ustinov, N. Maleev, A. Zhukov, M. Maximov, B. V. Volovik, Z. Alferov, D. Bimberg","doi":"10.1109/ISLC.2000.882265","DOIUrl":null,"url":null,"abstract":"Pulsed lasing at 1.3 /spl mu/m via the exciton ground state is demonstrated for vertical cavity surface emitting lasers containing three uncoupled sheets of InAs quantum dot active layers. The dots lie within InGaAs quantum wells separated by GaAs barrier layers. The structures are grown on GaAs substrates and when fabricated include selectively oxidized AlO current apertures and AlO/GaAs distributed Bragg reflectors. Experimental devices operate pulsed at 20/spl deg/C with threshold currents below 2 mA and differential slope efficiencies of 40%.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Vertical cavity surface emitting lasers with InAs-InGaAs quantum dot active regions on GaAs substrates emitting at 1.3 /spl mu/m\",\"authors\":\"J. Lott, V. Ustinov, N. Maleev, A. Zhukov, M. Maximov, B. V. Volovik, Z. Alferov, D. Bimberg\",\"doi\":\"10.1109/ISLC.2000.882265\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Pulsed lasing at 1.3 /spl mu/m via the exciton ground state is demonstrated for vertical cavity surface emitting lasers containing three uncoupled sheets of InAs quantum dot active layers. The dots lie within InGaAs quantum wells separated by GaAs barrier layers. The structures are grown on GaAs substrates and when fabricated include selectively oxidized AlO current apertures and AlO/GaAs distributed Bragg reflectors. Experimental devices operate pulsed at 20/spl deg/C with threshold currents below 2 mA and differential slope efficiencies of 40%.\",\"PeriodicalId\":322366,\"journal\":{\"name\":\"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2000.882265\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2000.882265","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

在含有三个不耦合的InAs量子点有源层的垂直腔面发射激光器中，证明了通过激子基态以1.3 /spl mu/m的速度进行脉冲激光。这些点位于被砷化镓势垒层隔开的InGaAs量子阱内。该结构生长在GaAs衬底上，制造时包括选择性氧化的AlO电流孔和AlO/GaAs分布的Bragg反射器。实验装置在20/spl度/C下工作，阈值电流低于2 mA，差分斜率效率为40%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Vertical cavity surface emitting lasers with InAs-InGaAs quantum dot active regions on GaAs substrates emitting at 1.3 /spl mu/m

Pulsed lasing at 1.3 /spl mu/m via the exciton ground state is demonstrated for vertical cavity surface emitting lasers containing three uncoupled sheets of InAs quantum dot active layers. The dots lie within InGaAs quantum wells separated by GaAs barrier layers. The structures are grown on GaAs substrates and when fabricated include selectively oxidized AlO current apertures and AlO/GaAs distributed Bragg reflectors. Experimental devices operate pulsed at 20/spl deg/C with threshold currents below 2 mA and differential slope efficiencies of 40%.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)

自引率

0.00%

发文量