A. Dehqan, K. Mafinezhad, E. Kargaran, H. Nabovati
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引用次数: 3
摘要
本文介绍了一种低电压、低功耗的双频低噪声放大器。通过采用MOSFET的正向偏置和电流复用拓扑，LNA可以在降低电源电压和功耗的情况下工作，同时由于其拓扑结构而保持高增益。LNA采用0.18 um CMOS工艺设计，工作频率分别为2.4 GHz和5.2GHz，电压增益分别为13.1 dB和14.2 dB, NF增益分别为2.9dB和2.6dB，电源电压为0.7V，功耗为3mW。
Design of low voltage low power dual-band LNA with forward body biasing technique
A low voltage, low power dual band Low Noise Amplifier (LNA) is presented in this paper. By employing a forward body bias of the MOSFET and current reuse topology the LNA can be operated at reduced supply voltage and power consumption while maintaining high gain due to its topology. Using 0.18 um CMOS process the LNA is designed at 2.4 GHz and 5.2GHz with 13.1 dB and 14.2 dB voltage gains and 2.9dB and 2.6dB NF respectively with 0.7V supply voltage and 3mW power consumption.
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