带隙缩小对硅和GaAs pn结电容的影响

Proceedings of the 1988 Bipolar Circuits and Technology Meeting, Pub Date : 1988-09-12 DOI:10.1109/BIPOL.1988.51077

S. Jain, R. Mertens, P. van Mieghem, M. Mauk, M. Ghannam, G. Borghs, R. van Overstraeten

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引用次数: 3

摘要

通过计算机模拟研究了重掺杂对突变梯度和线性梯度p-n结电容电压关系的影响。给出了补偿硅中线性梯度结带隙缩小的估计。研究了MBE生长的突然p-n GaAs结的电容-电压曲线，并与理论曲线进行了比较

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Effects of bandgap narrowing on the capacitance of silicon and GaAs pn junctions

The effect of heavy doping on the capacitance-voltage relation of abrupt and linearly-graded p-n junctions is studied by computer simulations. An estimate of bandgap narrowing in compensated silicon is given for linearly-graded junctions. Capacitance-voltage curves of abrupt p-n GaAs junctions grown by MBE are investigated and compared to the theoretical curves.<>

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Proceedings of the 1988 Bipolar Circuits and Technology Meeting,

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