硬件结果演示使用电源信号测量缺陷检测

D. Acharyya, J. Plusquellic
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引用次数: 14

摘要

本文提出的缺陷检测的电源暂态信号(I/sub DDT/)方法分析了在被测芯片(CUT)上的一组电源焊盘上缺陷引起的区域信号变化。该方法是基于CUT与已知无缺陷的芯片的比较。对一组无缺陷芯片进行分析,以建立一个区分缺陷效应和过程变化(无缺陷)效应的统计度量。本文给出了硬件结果,证明了一种新的基于几何的缺陷检测技术的有效性,该技术使用了九个副本的测试芯片。用8个芯片作为无缺陷芯片,推导出统计极限。在第九芯片中模拟缺陷,以评估该方法的缺陷检测能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Hardware results demonstrating defect detection using power supply signal measurements
The power supply transient signal (I/sub DDT/) method that we propose for defect detection analyzes regional signal variations introduced by defects at a set of power supply pads on the chip under test (CUT). The method is based on the comparison of the CUT with chips that are known to be defect free. A set of defect free chips are analyzed to establish a statistical metric that distinguishes between defect effects and process variation (defect free) effects. This paper presents hardware results that demonstrate the effectiveness of a novel geometry based defect detection technique using nine copies of a test chip. Eight chips are used as defect free chips to derive the statistical limits. Emulated defects are provoked in the ninth chip to evaluate the defect detection capabilities of the method.
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