B/sub 2/H/sub 6/等离子体掺杂“原位He预非晶化”

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. Pub Date : 2004-06-15 DOI:10.1109/VLSIT.2004.1345466

Y. Sasaki, C. Jin, H. Tamura, B. Mizuno, R. Higaki, T. Satoh, K. Majima, H. Sauddin, K. Takagi, S. Ohmi, K. Tsutsui, H. Iwai

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引用次数: 15

摘要

证明了等离子体掺杂可以降低薄片电阻(Rs)，同时保持较浅的结深(Xj)。将原位氦预非晶化(He-PA)技术引入到等离子体掺杂(PD)中。通过调整B/sub - 2/H/sub - 6/ PD条件，优化了高剂量和超浅as掺杂谱。非晶层和Xj的光吸收率由He-PA条件控制。这些新技术在形成超浅p/sup +/-n结方面的优势首次通过闪光灯退火(FLA)和激光退火(All Solid-State Green laser退火:ASLA)得到验证。在Rs、Xj和轮廓陡度方面取得了良好的效果。

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B/sub 2/H/sub 6/ plasma doping with "in-situ He pre-amorphization"

Plasma doping process to reduce sheet resistance (Rs) keeping shallow junction depth (Xj) was demonstrated. In-situ Helium pre-amorphization (He-PA) was introduced to plasma doping (PD) method. High dose and ultra-shallow as-doped profiles were optimized by adjusting B/sub 2/H/sub 6/ PD conditions. The optical absorption rate in the amorphous layer and Xj was controlled by the He-PA conditions. Advantage of these new techniques to form ultra-shallow p/sup +/-n junction were verified by flash lamp annealing (FLA) and laser annealing (All Solid-State Green Laser Annealing: ASLA) for the first time. Excellent results on Rs, Xj and abruptness of profiles were obtained.

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Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.

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