A. Pouydebasque, B. Dumont, F. Wacquant, A. Halimaoui, C. Laviron, D. Lenoble, R. El-Farhane, B. Duriez, F. Arnaud, V. Carron, C. Rossato, S. Pokrant, F. Salvetti, A. Dray, F. Boeuf, T. Skotnicki
{"title":"45 nm及以下节点nmos结集成的超高温非扩散激光退火研究","authors":"A. Pouydebasque, B. Dumont, F. Wacquant, A. Halimaoui, C. Laviron, D. Lenoble, R. El-Farhane, B. Duriez, F. Arnaud, V. Carron, C. Rossato, S. Pokrant, F. Salvetti, A. Dray, F. Boeuf, T. Skotnicki","doi":"10.1109/IWJT.2005.203867","DOIUrl":null,"url":null,"abstract":"This paper demonstrates that, for NMOS, the use of LSA and smart junction engineering enable to improve dramatically short channel effects (-65% in DIBL at L/sub g/=45 nm due to lower X/sub j/ and DL) and I/sub on//I/sub off/ performance (+7% I/sub on/ at I/sub off/=100 nA//spl mu/m due to steeper sub-threshold slope and reduced poly-depletion) compared to spike annealed N-MOSFETs. These results show the potential advantage of ultra-high temperature and non diffusive annealing such as LSA that may be necessary for the 45 nm technology and below.","PeriodicalId":307038,"journal":{"name":"Extended Abstracts of the Fifth International Workshop on Junction Technology","volume":"07 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"NMOS-junction integration study with ultra-high temperature non-diffusive laser annealing for the 45 nm node and below\",\"authors\":\"A. Pouydebasque, B. Dumont, F. Wacquant, A. Halimaoui, C. Laviron, D. Lenoble, R. El-Farhane, B. Duriez, F. Arnaud, V. Carron, C. Rossato, S. Pokrant, F. Salvetti, A. Dray, F. Boeuf, T. Skotnicki\",\"doi\":\"10.1109/IWJT.2005.203867\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper demonstrates that, for NMOS, the use of LSA and smart junction engineering enable to improve dramatically short channel effects (-65% in DIBL at L/sub g/=45 nm due to lower X/sub j/ and DL) and I/sub on//I/sub off/ performance (+7% I/sub on/ at I/sub off/=100 nA//spl mu/m due to steeper sub-threshold slope and reduced poly-depletion) compared to spike annealed N-MOSFETs. These results show the potential advantage of ultra-high temperature and non diffusive annealing such as LSA that may be necessary for the 45 nm technology and below.\",\"PeriodicalId\":307038,\"journal\":{\"name\":\"Extended Abstracts of the Fifth International Workshop on Junction Technology\",\"volume\":\"07 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Extended Abstracts of the Fifth International Workshop on Junction Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2005.203867\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of the Fifth International Workshop on Junction Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2005.203867","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
NMOS-junction integration study with ultra-high temperature non-diffusive laser annealing for the 45 nm node and below
This paper demonstrates that, for NMOS, the use of LSA and smart junction engineering enable to improve dramatically short channel effects (-65% in DIBL at L/sub g/=45 nm due to lower X/sub j/ and DL) and I/sub on//I/sub off/ performance (+7% I/sub on/ at I/sub off/=100 nA//spl mu/m due to steeper sub-threshold slope and reduced poly-depletion) compared to spike annealed N-MOSFETs. These results show the potential advantage of ultra-high temperature and non diffusive annealing such as LSA that may be necessary for the 45 nm technology and below.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
