格子匹配的8微米小间距130万像素InGaAs(会议报告)

M. Ettenberg, Hai Nguyen, M. Lange, Christopher R. Martin, Rick Roehl
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引用次数: 0

摘要

在100mm InP衬底上生长的晶格匹配InGaAs阵列已经在商业上制造成1280x1024阵列,其间距为12和10 μ m像素。这一努力证明了在较小的8µm间距上杂交相同格式阵列的能力。较小的间距阵列具有很高的可操作性,基板去除可实现400至1700 nm的响应。该阵列具有100%的填充系数,能够在室温下工作。读出架构采用每个检测器一个源跟随器结构,具有两个120k和2me的完整井,并带有板载12位数字ADC。数字成像仪能够在读取噪声低于65e的情况下,在全分辨率下实现超过150帧/秒的快速帧率。这种快速的帧率与两个全井容量相结合,具有很大的变化,允许电子产品在未来的迭代中用于高动态范围的相机系统。暗电流的低幅度和高均匀性使使用简单的单点非均匀性校正(NUC)能够产生清晰的图像。由于低暗电流和简单的读出结构,该成像仪适用于非冷却应用。更小的像素间距可以实现更小的光学序列和外形尺寸,同时显著降低成本。随着技术过渡到晶圆级杂交,成本节约进一步增强。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Lattice matched InGaAs on small 8 micron pitch at 1.3 Megapixels (Conference Presentation)
Lattice matched InGaAs arrays grown on 100 mm InP substrates have been manufactured commercially into 1280x1024 arrays on 12 and 10 µm pixel pitches for several years. This effort demonstrates the ability to hybridize the same format arrays on smaller 8 µm pitch. The smaller pitch array has high operability and substrate removal enables response from 400 to 1700 nm. The array has 100% fill factor and is capable of room temperature operation. The read out architecture utilized a source follower per detector structure with two full wells of 120 ke- and 2 Me- with an onboard 12 bit digital ADC. The digital imager is capable of fast frame rates exceeding 150 frames/s at full resolution at sub 65e- of readnoise. This fast frame rate combined with the two full well capacities which have a large variation allow electronics in a future iteration for a high dynamic range camera system. The low magnitude and high uniformity of the dark current enables the use of a simple single point Non-Uniformity Correction (NUC) to produce a clear image. This imager is suitable for use in uncooled applications because of the low dark current and simple read out architecture. The smaller pixel pitch enables smaller optical trains and form factors at a significantly reduced cost. The cost savings are further enhanced as the technology transitions to wafer scale hybridization.
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