{"title":"InGaAs/GaAs应变多周期量子阱红外探测器的自一致算法","authors":"X. Q. Lu, D. Xiong, C. Yu, J. Q. Wang","doi":"10.1109/NUSOD.2014.6935351","DOIUrl":null,"url":null,"abstract":"This work presents a self-consistent algorithm for the simulation of responsivity and detectivity of InGaAs/GaAs strained multi-period Quantum Well Infrared Photodetectors. This algorithm takes into account the fundamental mechanisms involved in the InGaAs/GaAs detector detection process. We have calculated a practical InGaAs/GaAs detector by using this algorithm. The obtained results were in good agreement with the experiments at low temperature below 3.5 V.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A self-consistent algorithm for InGaAs/GaAs strained multi-period Quantum Well Infrared Photodetectors\",\"authors\":\"X. Q. Lu, D. Xiong, C. Yu, J. Q. Wang\",\"doi\":\"10.1109/NUSOD.2014.6935351\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents a self-consistent algorithm for the simulation of responsivity and detectivity of InGaAs/GaAs strained multi-period Quantum Well Infrared Photodetectors. This algorithm takes into account the fundamental mechanisms involved in the InGaAs/GaAs detector detection process. We have calculated a practical InGaAs/GaAs detector by using this algorithm. The obtained results were in good agreement with the experiments at low temperature below 3.5 V.\",\"PeriodicalId\":114800,\"journal\":{\"name\":\"Numerical Simulation of Optoelectronic Devices, 2014\",\"volume\":\"80 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Numerical Simulation of Optoelectronic Devices, 2014\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2014.6935351\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Numerical Simulation of Optoelectronic Devices, 2014","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2014.6935351","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A self-consistent algorithm for InGaAs/GaAs strained multi-period Quantum Well Infrared Photodetectors
This work presents a self-consistent algorithm for the simulation of responsivity and detectivity of InGaAs/GaAs strained multi-period Quantum Well Infrared Photodetectors. This algorithm takes into account the fundamental mechanisms involved in the InGaAs/GaAs detector detection process. We have calculated a practical InGaAs/GaAs detector by using this algorithm. The obtained results were in good agreement with the experiments at low temperature below 3.5 V.