窄带和宽带可切换吸收/反射器的有源频率选择表面嵌入偏置网络设计

Priyanka Bajaj, Debidas Kundu, D. Singh
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引用次数: 0

摘要

提出了一种基于有源频率选择表面(AFSS)的具有偏振不敏感特性的可切换吸收/反射器的设计。最初,实现了窄带吸收/反射器。之后,集总电阻被加载到相同的FSS几何结构中,以获得宽带频率的可切换吸收/反射器。这两种设计都包括印刷在一个介电基板最上面表面的AFSS层和在另一个介电基板底部的金属接地。吸收和反射状态之间的切换是通过分别调节AFSS顶层的PIN二极管的OFF/ON状态来实现的。仿真结果表明,该窄带结构谐振频率为3.24 GHz,在吸收模式下反射系数小于−10 dB。当切换到反射器模式时,它在相同的频率下充当完美的反射器。此外,该结构在4.89 GHz至10.28 GHz的宽带频率范围内作为吸收器,反射系数小于- 10 dB;在4.89 GHz至7.95 GHz的宽带频率范围内,在适当加载集总电阻和空气间隔器后,反射器的峰值回波损耗小于3 dB。此外,在这两种结构中使用的PIN二极管的偏置网络都嵌入在几何结构中,从而消除了对额外偏置线的要求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of a Narrowband and a Wideband Switchable Absorber/Reflector Using an Active Frequency Selective Surface With Embedded Biasing Network
This paper presents the design of an active frequency selective surface (AFSS)-based switchable absorber/reflector with polarization-insensitive characteristics. Initially, a narrowband absorber/reflector is realized. Later, lumped resistors are loaded in the same FSS geometry to obtain a switchable absorber/reflector for broadband frequencies. Both the designs consist of an AFSS layer printed at the uppermost surface of one dielectric substrate and a metal ground at the bottom of another dielectric substrate. The switchability between the absorption and reflection state is realized by regulating the PIN diode's OFF/ON states, respectively, employed at the top AFSS layer. The simulated results show that the proposed narrowband structure resonates at 3.24 GHz with a reflection coefficient lower than −10 dB in absorber mode. It acts as a perfect reflector at the same frequency when switched to the reflector mode. In addition, the same structure acts as an absorber for broadband frequencies ranging from 4.89 GHz to 10.28 GHz with less than −10 dB reflection coefficients and a reflector from 4.89-7.95 GHz with a peak return loss of less than 3 dB after proper loading of lumped resistors and air-spacer. Furthermore, the biasing networks for the PIN diodes used in both the structures are embedded within the geometry, which eliminates the requirement of additional bias lines.
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