{"title":"铁电存储器的复兴:它们能改变游戏规则吗?","authors":"M. Park","doi":"10.3938/phit.30.028","DOIUrl":null,"url":null,"abstract":"Ferroelectric memories have been studied for ∼60 years since their first suggestion in 1952. The material properties of ferroelectrics are considered ideal for universal memories with the availability of electrical program/erase and read processes. However, challenges in the physical scaling down of bulk ferroelectric materials were a critical hurdle for the success of ferroelectric materials. In 2011, ferroelectricity in HfO2-based thin film was first reported, and this unexpected discovery revived research on ferroelectric memories. In this review, the properties, history, and applications of HfO2-based ferroelectrics are reviewed, and a perspective on semiconductor devices based on them is provided.","PeriodicalId":365688,"journal":{"name":"Physics and High Technology","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Renaissance of Ferroelectric Memories: Can They Be a Game-changer?\",\"authors\":\"M. Park\",\"doi\":\"10.3938/phit.30.028\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ferroelectric memories have been studied for ∼60 years since their first suggestion in 1952. The material properties of ferroelectrics are considered ideal for universal memories with the availability of electrical program/erase and read processes. However, challenges in the physical scaling down of bulk ferroelectric materials were a critical hurdle for the success of ferroelectric materials. In 2011, ferroelectricity in HfO2-based thin film was first reported, and this unexpected discovery revived research on ferroelectric memories. In this review, the properties, history, and applications of HfO2-based ferroelectrics are reviewed, and a perspective on semiconductor devices based on them is provided.\",\"PeriodicalId\":365688,\"journal\":{\"name\":\"Physics and High Technology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physics and High Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3938/phit.30.028\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physics and High Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3938/phit.30.028","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Renaissance of Ferroelectric Memories: Can They Be a Game-changer?
Ferroelectric memories have been studied for ∼60 years since their first suggestion in 1952. The material properties of ferroelectrics are considered ideal for universal memories with the availability of electrical program/erase and read processes. However, challenges in the physical scaling down of bulk ferroelectric materials were a critical hurdle for the success of ferroelectric materials. In 2011, ferroelectricity in HfO2-based thin film was first reported, and this unexpected discovery revived research on ferroelectric memories. In this review, the properties, history, and applications of HfO2-based ferroelectrics are reviewed, and a perspective on semiconductor devices based on them is provided.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
