Liang Pang, Y. Lian, Dong‐Seok Kim, Jung-Hee Lee, K. Kim
{"title":"溅射栅极- sio2 /AiGaN/GaN MOSHEMT实现高击穿电压","authors":"Liang Pang, Y. Lian, Dong‐Seok Kim, Jung-Hee Lee, K. Kim","doi":"10.1109/PECI.2013.6506027","DOIUrl":null,"url":null,"abstract":"By using RF magnetron sputtering with oxygen compensation, high-quality SiO2-on-GaN with a breakdown field of 9.6 MV /cm was achieved. A post-annealing treatment was then developed to remove the sputtering-induced epilayer damage, which not only recovered, but also improved the electron concentration and mobility of the 2-D electron gas by 21.7% and 5.5%, respectively. A high-performance SiO2 / AlGaN / GaN MOSHEMT was thus fabricated, which exhibited a maximum drain current of 594 mA/mm and a breakdown voltage of 205 V at the gate-drain distance of 2 μm. This breakdown voltage performance of the device is among the best of GaN-based MOSHEMTs reported to date, thus is ideally suited for high-power applications.","PeriodicalId":113021,"journal":{"name":"2013 IEEE Power and Energy Conference at Illinois (PECI)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Sputtered-gate-SiO2/AiGaN/GaN MOSHEMT for high breakdown voltage achievement\",\"authors\":\"Liang Pang, Y. Lian, Dong‐Seok Kim, Jung-Hee Lee, K. Kim\",\"doi\":\"10.1109/PECI.2013.6506027\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By using RF magnetron sputtering with oxygen compensation, high-quality SiO2-on-GaN with a breakdown field of 9.6 MV /cm was achieved. A post-annealing treatment was then developed to remove the sputtering-induced epilayer damage, which not only recovered, but also improved the electron concentration and mobility of the 2-D electron gas by 21.7% and 5.5%, respectively. A high-performance SiO2 / AlGaN / GaN MOSHEMT was thus fabricated, which exhibited a maximum drain current of 594 mA/mm and a breakdown voltage of 205 V at the gate-drain distance of 2 μm. This breakdown voltage performance of the device is among the best of GaN-based MOSHEMTs reported to date, thus is ideally suited for high-power applications.\",\"PeriodicalId\":113021,\"journal\":{\"name\":\"2013 IEEE Power and Energy Conference at Illinois (PECI)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Power and Energy Conference at Illinois (PECI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PECI.2013.6506027\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Power and Energy Conference at Illinois (PECI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PECI.2013.6506027","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Sputtered-gate-SiO2/AiGaN/GaN MOSHEMT for high breakdown voltage achievement
By using RF magnetron sputtering with oxygen compensation, high-quality SiO2-on-GaN with a breakdown field of 9.6 MV /cm was achieved. A post-annealing treatment was then developed to remove the sputtering-induced epilayer damage, which not only recovered, but also improved the electron concentration and mobility of the 2-D electron gas by 21.7% and 5.5%, respectively. A high-performance SiO2 / AlGaN / GaN MOSHEMT was thus fabricated, which exhibited a maximum drain current of 594 mA/mm and a breakdown voltage of 205 V at the gate-drain distance of 2 μm. This breakdown voltage performance of the device is among the best of GaN-based MOSHEMTs reported to date, thus is ideally suited for high-power applications.