一种新的多晶硅薄膜晶体管电荷泵浦模型

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496332

Kee-Jong Kim, Seong-Gyun Kim, W. Park, O. Kim

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引用次数: 0

摘要

建立了考虑多晶硅薄膜晶体管体态的电荷泵浦模型。在这里，我们将阈值电压定义为在施加的脉冲宽度内填充未捕获状态的最小电压。得到了包含发射能级的阈值电压与深度的函数关系。结果表明，该模型的计算电流比电流或界面状态模型更符合实测电流。

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A new charge pumping model for polysilicon thin film transistors

A charge pumping model considering bulk states in polysilicon thin film transistors has been developed. Here, we define the threshold voltage as a minimum voltage to fill the untrapped states within an applied pulse width. And the threshold voltage including the emission energy level was obtained as a function of depth. It shows that the calculated current of this model is more consistent with the measured one rather than the current or interface state model.

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1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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