从增益制导双条纹激光二极管阵列观察到的折射率引导横向模式

D. Heflinger, M. Chang, W. R. Fenner
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引用次数: 0

摘要

已经观察到增益制导双条纹激光器在折射率制导模式下激光。这个指数指南是由条纹之间载流子浓度的下降产生的。双条纹阵列具有4 μm宽、8 μm中心间距的第一种激光模式为零阶折射率引导模式。这种模式已被一个单叶远场和一个紧密限制在条纹之间的近场剖面所识别。在较高的电流下,观察到双叶近场强度剖面在比基波波长短的10-20-Å波长处同时激光。虽然远场是双瓣的,暗示了一种非相位增益制导阵列模式,但仔细测量近场表明,这种双瓣模式是一阶折射率制导横向模式。近场条纹以外的横向范围小,条纹之间没有干涉条纹,这与增益引导超模不一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Index-guided Lateral Modes Observed From Gain-guided Twin-stripe Laser Diode Arrays
Gain-guided twin-stripe lasers have been observed to lase in index-guided modes. This index-guide is created by a dip in the carrier concentration between the stripes. The first lasing mode of a twin-stripe array, having 4-μm wide stripes with a 8-μm center-to-center spacing, is the zeroth-order index-guided mode. This mode has been identified by a single-lobed far field and a near-field profile tightly confined between the stripes. At higher currents, a double-lobed near-field intensity profile is observed to lase simultaneously at a 10-20-Å wavelength shorter than the wavelength of the fundamental. Although the far field is double-lobed, suggestive of an out-of-phase gain-guided array mode, careful measurements of the near field indicate that this double-lobed mode is the first-order index-guided lateral mode. The small lateral extent beyond the stripes in the near field and the lack of interference fringes between the stripes is inconsistent with a gain-guided super-mode.
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