Noise in metamorphic AlGaAsSb/InGaAs/AlGaAsSb HEMTs

In this paper, we presents the first measurement of minimum noise figure in AlGaAsSb/InGaAs/AlGaAsSb metamorphic quantum well HEMTs (MHEMTs). MHEMTs allow the development of InGaAs-based HEMTs on inexpensive GaAs substrates in contrast to the rather expensive InP-substrates. A measured low noise figure, F/sub min/ is a function of frequency at different gate biases. This provides an attractive alternative technology for the realization of low noise millimeter wave devices.