用于5G NR应用的41 ghz 19.4 dbm PSATCMOS多尔蒂功率放大器

2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Pub Date : 2022-10-28 DOI:10.1109/ICTA56932.2022.9962970

Zheng Li, Zixin Chen, Qiaoyu Wang, Junqing Liu, Jian Pang, A. Shirane, K. Okada

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引用次数: 0

摘要

本文提出了一种采用标准65nm CMOS技术的41 ghz Doherty功率放大器(PA)，用于5G新无线电(NR)应用。PA采用基于变压器的并联Doherty结构，提高了功率附加效率(PAE)。提出了一种可调谐的90°混合式输出相位补偿方法。在1v电源下，在41.5GHz下实现了19.4dBm的饱和输出功率(PSAT)和18.6dBm的OP1dB。输出功率回退(PBO)时的峰值PAE和PAE分别为30.4%和19.2%。核心芯片面积为0.22 mm2，静态功耗为76mW。

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A 41-GHz 19.4-dBm PSATCMOS Doherty Power Amplifier for 5G NR Applications

In this paper, a 41-GHz Doherty power amplifier (PA) in a standard 65nm CMOS technology is presented for 5G New Radio (NR) applications. The PA implements transformer-based parallel-combined Doherty structure to enhance the power-added efficiency (PAE). And the tunable 90° hybrid is proposed for out-put phase compensation. This work achieves a saturated output power (PSAT) of 19.4dBm and an OP1dB of 18.6dBm at 41.5GHz under 1-V power supply. The peak PAE and the PAE at 6-dB out-put power back-off (PBO) are 30.4% and 19.2%, respectively. The core chip area is 0.22 mm2with a static power consumption of 76mW.

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2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

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