硫化镧薄膜在硅和磷化铟衬底上的脉冲激光沉积:生长、表征和场发射特性

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1109/IVNC.2004.1355008

M. Cahay, K. Garre, P. Draviam, P. Boolchand, S. Fairchild, J. Jones, X. Wu, D. Poitras, D. J. Lockwood, V. Semet, V. Binh

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引用次数: 0

摘要

研究了脉冲激光在硅衬底和磷化铟衬底上沉积硫化镧薄膜的生长、表征和场发射特性。对相当厚的薄膜(微米尺寸)进行x射线衍射分析，成功生长出立方岩盐结构，晶格常数为5.863(7)埃，接近体积值。薄膜的高分辨率透射电子显微镜图像显示，它们是由非晶材料区域隔开的纳米晶体组成的。并进行了拉曼光谱和椭偏测量。在室温下，由Fowler-Nordheim图得到的功函数均值为0.65 eV。此外，还观察到场发射电流与温度有很强的相关性。

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Pulsed laser deposition of lanthanum sulfide thin films on silicon and indium phosphide substrates: growth, characterization, and field emission properties

The growth, characterization, and field emission properties of pulsed laser deposition of lanthanum sulfide thin films on silicon and indium phosphide substrates were studied. X-ray diffraction analysis of fairly thick films (micrometer size) reveals the successful growth of the cubic rocksalt structure with a lattice constant of 5.863(7) angstroms, which is close to the bulk value. High resolution transmission electron microscope images of the films reveal that they are comprised of nanocrystals separated by regions of amorphous materials. Raman spectra and ellipsometry measurements were also performed. It was found that the work function deduced from Fowler-Nordheim plots at room temperature has a mean value of 0.65 eV. Also, a strong dependence of the field emission current with temperature was observed.

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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