具有220 GHz晶圆功率组合的48.8 mW多单元InP HBT放大器

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI:10.1109/CSICS.2011.6062480

T. Reed, M. Rodwell, Z. Griffith, P. Rowell, M. Urteaga, M. Field, J. Hacker

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引用次数: 18

摘要

我们报道了采用250nm磷化铟HBT技术的220 GHz固态功率放大器(SSPA)。报告的放大器包括具有2和4个功率组合电池的设计。4单元放大器在220 GHz时具有10db的小信号增益和48.8 mW的输出功率，增益为4.5 dB。这些放大器具有大于48ghz的3db小信号带宽。5µm厚的BCB微带布线环境，具有4级互连，允许低损耗传输线，毫米波调谐结构和每个单元内的密集互连。2单元放大器在220 GHz时提供10.9 dB小信号增益，3db带宽大于42 GHz, 208GHz时饱和输出功率为26.3 mW。

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48.8 mW Multi-Cell InP HBT Amplifier with On-Wafer Power Combining at 220 GHz

We report 220 GHz Solid State Power Amplifier (SSPA) using a 250nm Indium Phosphide HBT technology. Amplifiers reported include designs having 2 and 4 power combined cells. The 4-cell amplifiers exhibited 10 dB small signal gain and 48.8 mW of output power with 4.5 dB gain at 220 GHz. These amplifiers have a 3-dB small signal bandwidth of greater than 48 GHz. A 5-µm thick BCB microstrip wiring environment with 4 levels of interconnects allowed for low-loss transmission lines, mm-wave tuning structures, and dense interconnects within each cell. The 2-cell amplifiers provide 10.9 dB small signal gain at 220 GHz with a 3-dB bandwidth of greater than 42 GHz and 26.3 mW of saturated output power at 208GHz.

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2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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