Q. Yu, H. Then, D. Thomson, Jessica C. Chou, Jeffrey Garrett, I-Lun Huang, I. Momson, Surej Ravikumar, Seahee Hwangbo, A. Latorre-Rey, Ananda Roy, M. Radosavljevic, M. Beumer, P. Koirala, N. Thomas, N. Nair, H. Vora, S. Bader, J. Rode, J. Jensen, S. Rami
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5G mmWave Power Amplifier and Low-Noise Amplifier in 300mm GaN-on-Si Technology
This paper presents fully integrated power amplifier (PA) and low-noise amplifier (LNA) targeting 5G mmWave band n260 (37GHz-40GHz) in 300mm GaN-on-Si technology. At 39.5GHz, the PA achieves measured Psat, peak PAE, linear gain, and OP1dB of 25dBm, 38.8%, 24.8dB, and 19.8dBm, occupying only 0.079mm2. The LNA achieves 24.6dB gain, 2.9dB noise figure, and -11.4dBm IIP3 at 38GHz. Both circuits are compact and viable candidates for phased arrays in mobile devices. This is industry’s first demonstration of mmWave circuits in 300mm GaN-on-Si technology.