{"title":"采用硅环谐振腔的电场驱动光调制器","authors":"Y. Amemiya, Y. Tanushi, T. Tokunaga, S. Yokoyama","doi":"10.1109/PS.2008.4804175","DOIUrl":null,"url":null,"abstract":"The optical modulation of Si ring resonator by applying electric-field was, for the first time, achieved although carrier injection type modulations were reported. The 33% optical modulation was realized at applied voltage of 200 V.","PeriodicalId":113046,"journal":{"name":"2008 International Conference on Photonics in Switching","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electric-field drive optical modulator using Si ring resonator\",\"authors\":\"Y. Amemiya, Y. Tanushi, T. Tokunaga, S. Yokoyama\",\"doi\":\"10.1109/PS.2008.4804175\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The optical modulation of Si ring resonator by applying electric-field was, for the first time, achieved although carrier injection type modulations were reported. The 33% optical modulation was realized at applied voltage of 200 V.\",\"PeriodicalId\":113046,\"journal\":{\"name\":\"2008 International Conference on Photonics in Switching\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Conference on Photonics in Switching\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PS.2008.4804175\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Conference on Photonics in Switching","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PS.2008.4804175","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electric-field drive optical modulator using Si ring resonator
The optical modulation of Si ring resonator by applying electric-field was, for the first time, achieved although carrier injection type modulations were reported. The 33% optical modulation was realized at applied voltage of 200 V.
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