用表面光电压技术测定非均匀载流子寿命半导体晶圆中的少数载流子扩散长度

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791651

L. Tan, F. Huynh

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引用次数: 0

摘要

提出了用表面光电压法测定非均匀载流子寿命半导体晶圆中少数载流子扩散长度的解析理论。利用该理论提取的少数载流子扩散长度值与全数值模拟结果吻合较好。该理论的实验验证目前正在进行中。

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Determination of minority carrier diffusion lengths in semiconductor wafers with non-uniform carrier lifetimes by the surface photovoltage technique

An analytical theory of the surface photovoltage method for the determination of the minority carrier diffusion lengths in semiconductor wafers with non-uniform carrier lifetimes is presented. Values of minority carrier diffusion lengths extracted using the theory agree well with those from full numerical simulations. Experimental verification of the theory is currently in progress.

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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