硅MIS结构内嵌表面电位的形成及其对横向电子输运和VAC的影响

2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE) Pub Date : 2018-09-01 DOI:10.1109/APEDE.2018.8542454

R. Yafarov, D. Nefedov

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引用次数: 0

摘要

研究了内部表面电位的形成对MIS结构电流-电压特性改变的规律。当用微波等离子体微处理获得原子清洁的硅晶体表面时，形成表面电位。在多种化学活性气体介质中进行了微波等离子体微处理。通过实验建立并提出了表面电位对硅MIS器件横向电子传递和电流-电压特性陡度的影响的解释。

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Formation and Influence of the Built-In Surface Potentials on the Transversal Electronic Transport and the VAC of Silicon MIS Structures

The regularities of the modification of the current-voltage characteristics of MIS structures due to the formation of built-in surface potentials are investigated. Surface potentials are formed when an atomically clean surface of silicon crystals is obtained using microwave plasma microprocessing. Microwave plasma microprocessing was carried out in various chemically active gas media. The interpretation of the effect of surface potentials on transversal electron transport and the steepness of the current-voltage characteristics of silicon MIS devices has been experimentally established and proposed.

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2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)

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