Efficient methods for Hall factor and transport coefficient evaluation for electrons and holes in Si and SiGe based on a full-band structure

Methods are presented, which allow the efficient calculation of equilibrium and near-equilibrium transport properties in conjunction with an full band structure evaluated by a nonlocal empirical pseudopotential method. These methods are not only applied to the case of transport parameter calibration, but are also used for the extraction of transport coefficients for hydrodynamic models.