毫米波InGaAs/InP异质结双极光电晶体管

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 Pub Date : 1995-11-27 DOI:10.1109/EDMO.1995.493695

D. Wake

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引用次数: 3

摘要

描述了具有几千直流增益和频率响应的InGaAs/InP异质结光电晶体管，其输出功率高于优化后的40 GHz光电二极管。这是由于双端、边缘耦合设计方法的结果，该方法允许制造小面积器件，具有低寄生和高效的光接入。

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Millimetre-wave InGaAs/InP heterojunction bipolar phototransistors

InGaAs/InP heterojunction phototransistors are described which have a dc gain of several thousand and a frequency response that shows higher output power than optimised photodiodes at 40 GHz. This is accomplished as a result of the two-terminal, edge-coupled design approach, which allows small area devices to be fabricated with low parasitics and efficient optical access.

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Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

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