衬底集成波导谐振器的空载品质因数及其随衬底参数的变化

Arani Ali Khan, M. Mandal, S. Sanyal
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引用次数: 23

摘要

本文研究了衬底集成波导(SIW)谐振器的空载品质因子QU随衬底参数的变化规律。结果表明,介质损耗比与衬底厚度、介电常数和损耗正切值密切相关。本文还比较了SIW谐振器与传统矩形充气波导谐振器和微带谐振器的曲度。本文所示的图形结果可以作为SIW应用中选择合适的导波结构或衬底的指导,特别是在插入损耗是一个重要问题的情况下。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Unloaded quality factor of a substrate integrated waveguide resonator and its variation with the substrate parameters
In this paper, the variation of unloaded Quality factor QU of a substrate integrated waveguide (SIW) resonator with the substrate parameters is presented. It is observed that the QU strongly depends on substrate thickness, dielectric constant and loss tangent values. QU of a SIW resonator is also compared with that of a conventional rectangular air filled waveguide resonator and also that of a microstrip resonator. The graphical results shown in this paper can be used as a guideline to choose a proper wave guiding structure or an appropriate substrate for SIW application especially where insertion loss is an important issue.
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