大功率PWM逆变器串联igbt有源门控制策略

Soon W. Hong, Yong-Geun Lee
{"title":"大功率PWM逆变器串联igbt有源门控制策略","authors":"Soon W. Hong, Yong-Geun Lee","doi":"10.1109/PEDS.1999.792747","DOIUrl":null,"url":null,"abstract":"This paper describes an operation of series connected IGBT gate drive circuit with a closed loop voltage control in high voltage inverter applications. The purpose of voltage control is to instantaneously limit large overvoltage applied to certain IGBTs in inverter valves during switching transients and off-state IGBT voltages and to maintain the voltage to an acceptable level. The performance of the gate drive circuit is examined experimentally by the series connection of four different rated IGBTs with conventional snubber circuits. The experimental results show the voltage balancing by the voltage control with wide variations in imbalance conditions.","PeriodicalId":254764,"journal":{"name":"Proceedings of the IEEE 1999 International Conference on Power Electronics and Drive Systems. PEDS'99 (Cat. No.99TH8475)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":"{\"title\":\"Active gate control strategy of series connected IGBTs for high power PWM inverter\",\"authors\":\"Soon W. Hong, Yong-Geun Lee\",\"doi\":\"10.1109/PEDS.1999.792747\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes an operation of series connected IGBT gate drive circuit with a closed loop voltage control in high voltage inverter applications. The purpose of voltage control is to instantaneously limit large overvoltage applied to certain IGBTs in inverter valves during switching transients and off-state IGBT voltages and to maintain the voltage to an acceptable level. The performance of the gate drive circuit is examined experimentally by the series connection of four different rated IGBTs with conventional snubber circuits. The experimental results show the voltage balancing by the voltage control with wide variations in imbalance conditions.\",\"PeriodicalId\":254764,\"journal\":{\"name\":\"Proceedings of the IEEE 1999 International Conference on Power Electronics and Drive Systems. PEDS'99 (Cat. No.99TH8475)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-07-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"24\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 1999 International Conference on Power Electronics and Drive Systems. PEDS'99 (Cat. No.99TH8475)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PEDS.1999.792747\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 1999 International Conference on Power Electronics and Drive Systems. PEDS'99 (Cat. No.99TH8475)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PEDS.1999.792747","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 24

摘要

本文介绍了带闭环电压控制的串联IGBT栅极驱动电路在高压逆变器中的工作原理。电压控制的目的是在切换瞬态和断开状态IGBT电压期间,立即限制施加到逆变器阀中的某些IGBT的大过电压,并将电压维持在可接受的水平。通过将4个不同额定值的igbt与常规缓冲电路串联,对栅极驱动电路的性能进行了实验研究。实验结果表明,在不平衡条件下,该电压控制方法可以实现电压的大变化平衡。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Active gate control strategy of series connected IGBTs for high power PWM inverter
This paper describes an operation of series connected IGBT gate drive circuit with a closed loop voltage control in high voltage inverter applications. The purpose of voltage control is to instantaneously limit large overvoltage applied to certain IGBTs in inverter valves during switching transients and off-state IGBT voltages and to maintain the voltage to an acceptable level. The performance of the gate drive circuit is examined experimentally by the series connection of four different rated IGBTs with conventional snubber circuits. The experimental results show the voltage balancing by the voltage control with wide variations in imbalance conditions.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信