单元化二硫化钼的耗散输运:远距离库仑散射的作用

2015 International Workshop on Computational Electronics (IWCE) Pub Date : 2015-10-26 DOI:10.1109/IWCE.2015.7301937

K. Khair, S. Ahmed

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引用次数: 1

摘要

在这项工作中，我们计算了由于a)本征声子，b)远程声子和c)远程库仑过程导致的单层二硫化钼的散射率。然后，我们利用基于粒子的蒙特卡罗器件模拟器研究了基于二硫化钼的单层场效应管器件中的电子输运。我们的研究结果表明，总散射率主要由远端库仑散射控制，与弹道散射相比，远端库仑散射使漏极电流降低了78%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Dissipative transport in monolayer MoS2: role of remote coulomb scattering

In this work, we calculate the scattering rates in monolayer MoS2 due to various a) intrinsic phonon, b) remote phonon, and c) remote Coulomb processes. We then study the electron transport in a monolayer MoS2 based FET device employing a particle based Monte Carlo device simulator. Our results show that the total scattering rate is strongly dominated by remote coulomb scattering, which, when compared to the ballistic regime, degrades the drain current by ~78%.

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2015 International Workshop on Computational Electronics (IWCE)

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