1.8 mΩcm2, 10a功率MOSFET, 4H-SiC

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346929

S. Harada, M. Kato, K. Suzuki, M. Okamoto, T. Yatsuo, K. Fukuda, K. Arai

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引用次数: 34

摘要

基于4H-SiC的功率MOSFET是一种极具吸引力的高速低功耗功率开关器件。在实现低导通电阻的4H-SiC功率MOSFET之前，需要解决的问题是SiO2/SiC界面处的低沟道迁移率。这项工作成功地提高了碳面衬底上埋沟道IEMOSFET的沟道迁移率，并在660 V的阻断电压下实现了1.8 mΩcm2的极低导通电阻

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1.8 mΩcm2, 10 A Power MOSFET in 4H-SiC

The power MOSFET on 4H-SiC is an attractive high-speed and low-dissipation power switching device. The problem to be solved before realizing the 4H-SiC power MOSFET with low on-resistance is low channel mobility at the SiO2/SiC interface. This work has succeeded in increasing the channel mobility in the buried channel IEMOSFET on carbon-face substrate, and has achieved an extremely low on-resistance of 1.8 mΩcm2 with a blocking voltage of 660 V

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2006 International Electron Devices Meeting

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