{"title":"利用微波来表征光激发半导体","authors":"H. K. Brown","doi":"10.1109/SSST.1990.138220","DOIUrl":null,"url":null,"abstract":"The author discusses a theoretical model describing the microwave transmission and reflection properties of semiconductor wafers after they have been illuminated by a short pulse of light from a laser. The model has three fundamental parts. The first part describes the absorption mechanism of the incident light pulse throughout the semiconductor, given the electron-hole-pair concentration as a function of position. In the second part the electron-hole-pair concentration during the decay process is described. Part three describes the microwave properties of the semiconductor as the electron-hole pairs return to their equilibrium state.<<ETX>>","PeriodicalId":201543,"journal":{"name":"[1990] Proceedings. The Twenty-Second Southeastern Symposium on System Theory","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The use of microwaves to characterize optically stimulated semiconductors\",\"authors\":\"H. K. Brown\",\"doi\":\"10.1109/SSST.1990.138220\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The author discusses a theoretical model describing the microwave transmission and reflection properties of semiconductor wafers after they have been illuminated by a short pulse of light from a laser. The model has three fundamental parts. The first part describes the absorption mechanism of the incident light pulse throughout the semiconductor, given the electron-hole-pair concentration as a function of position. In the second part the electron-hole-pair concentration during the decay process is described. Part three describes the microwave properties of the semiconductor as the electron-hole pairs return to their equilibrium state.<<ETX>>\",\"PeriodicalId\":201543,\"journal\":{\"name\":\"[1990] Proceedings. The Twenty-Second Southeastern Symposium on System Theory\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-03-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1990] Proceedings. The Twenty-Second Southeastern Symposium on System Theory\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SSST.1990.138220\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1990] Proceedings. The Twenty-Second Southeastern Symposium on System Theory","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSST.1990.138220","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The use of microwaves to characterize optically stimulated semiconductors
The author discusses a theoretical model describing the microwave transmission and reflection properties of semiconductor wafers after they have been illuminated by a short pulse of light from a laser. The model has three fundamental parts. The first part describes the absorption mechanism of the incident light pulse throughout the semiconductor, given the electron-hole-pair concentration as a function of position. In the second part the electron-hole-pair concentration during the decay process is described. Part three describes the microwave properties of the semiconductor as the electron-hole pairs return to their equilibrium state.<>
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