S. Mahapatra, V. Pott, S. Ecoffey, A. Schmid, C. Wasshuber, J. Tringe, Y. Leblebici, M. Declercq, K. Banerjee, A. Ionescu
{"title":"SETMOS:一种新型的真正混合SET-CMOS高电流库仑阻塞振荡单元，用于未来的纳米级模拟集成电路","authors":"S. Mahapatra, V. Pott, S. Ecoffey, A. Schmid, C. Wasshuber, J. Tringe, Y. Leblebici, M. Declercq, K. Banerjee, A. Ionescu","doi":"10.1109/IEDM.2003.1269377","DOIUrl":null,"url":null,"abstract":"We have proposed and validated a true hybrid SET/CMOS device, called SETMOS, that is able to extend the Coulomb blockade oscillations of a SET transistor into the /spl mu/A current range, corresponding to near sub-threshold operation region of a nanometer-scale MOSFET. New nano-scale analog applications, working at sub-ambient temperatures (-150/spl deg/C up to 100/spl deg/C), including a novel NDR circuit, amplifiers, and even NEMS-SETMOS circuit cells are uniquely supported by SETMOS.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"87 26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":"{\"title\":\"SETMOS: a novel true hybrid SET-CMOS high current Coulomb blockade oscillation cell for future nano-scale analog ICs\",\"authors\":\"S. Mahapatra, V. Pott, S. Ecoffey, A. Schmid, C. Wasshuber, J. Tringe, Y. Leblebici, M. Declercq, K. Banerjee, A. Ionescu\",\"doi\":\"10.1109/IEDM.2003.1269377\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have proposed and validated a true hybrid SET/CMOS device, called SETMOS, that is able to extend the Coulomb blockade oscillations of a SET transistor into the /spl mu/A current range, corresponding to near sub-threshold operation region of a nanometer-scale MOSFET. New nano-scale analog applications, working at sub-ambient temperatures (-150/spl deg/C up to 100/spl deg/C), including a novel NDR circuit, amplifiers, and even NEMS-SETMOS circuit cells are uniquely supported by SETMOS.\",\"PeriodicalId\":344286,\"journal\":{\"name\":\"IEEE International Electron Devices Meeting 2003\",\"volume\":\"87 26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"29\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Electron Devices Meeting 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2003.1269377\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269377","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SETMOS: a novel true hybrid SET-CMOS high current Coulomb blockade oscillation cell for future nano-scale analog ICs
We have proposed and validated a true hybrid SET/CMOS device, called SETMOS, that is able to extend the Coulomb blockade oscillations of a SET transistor into the /spl mu/A current range, corresponding to near sub-threshold operation region of a nanometer-scale MOSFET. New nano-scale analog applications, working at sub-ambient temperatures (-150/spl deg/C up to 100/spl deg/C), including a novel NDR circuit, amplifiers, and even NEMS-SETMOS circuit cells are uniquely supported by SETMOS.
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