{"title":"CRPhED机组低温等离子体处理过程模型","authors":"L. I. Lisitsyna","doi":"10.1109/APEIE.2000.913086","DOIUrl":null,"url":null,"abstract":"The application of the model of plasma gap for process of low-temperature plasmachemical treatment of units of cathode-ray and photoelectronic devices (CRPhED) is considered. The model allows to consider potential distribution in the gap as similar to potential distribution without plasma. The model gives the possibility to calculate potential on the electrodes, necessary for the quality cleaning of workpieces.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The model of process of low-temperature plasmachemical treatment of units of CRPhED\",\"authors\":\"L. I. Lisitsyna\",\"doi\":\"10.1109/APEIE.2000.913086\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The application of the model of plasma gap for process of low-temperature plasmachemical treatment of units of cathode-ray and photoelectronic devices (CRPhED) is considered. The model allows to consider potential distribution in the gap as similar to potential distribution without plasma. The model gives the possibility to calculate potential on the electrodes, necessary for the quality cleaning of workpieces.\",\"PeriodicalId\":184476,\"journal\":{\"name\":\"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEIE.2000.913086\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEIE.2000.913086","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The model of process of low-temperature plasmachemical treatment of units of CRPhED
The application of the model of plasma gap for process of low-temperature plasmachemical treatment of units of cathode-ray and photoelectronic devices (CRPhED) is considered. The model allows to consider potential distribution in the gap as similar to potential distribution without plasma. The model gives the possibility to calculate potential on the electrodes, necessary for the quality cleaning of workpieces.
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