M. Kudo, M. Arita, Yasuo Takahashi, K. Ohba, Masayuki Shimuta, I. Fujiwara
{"title":"用原位透射电镜观察纳米级ReRAM上导电丝的写入和擦除过程","authors":"M. Kudo, M. Arita, Yasuo Takahashi, K. Ohba, Masayuki Shimuta, I. Fujiwara","doi":"10.1109/IMW.2015.7150312","DOIUrl":null,"url":null,"abstract":"The paper shows clear evidence that in-situ transmission electron microscopy (TEM) can be used as a powerful tool to analyze ReRAM operation. Reproducible resistive switching of 100k cycles in 30- or 70-nm Cu-Te CBRAMs was achieved for the first time during in-situ TEM observation. A TEM sample of the CBRAM cells was processed by a focused ion beam method. The formation and rupture of a Cu filament was observed and analyzed in the TEM with energy dispersive x-ray (EDX) mapping. Since the overshoot current at the resistive switching was efficiently suppressed by a MOSFET placed in the TEM holder, stable and reproducible ReRAM switching operations were achieved in the TEM.","PeriodicalId":107437,"journal":{"name":"2015 IEEE International Memory Workshop (IMW)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Visualization of Conductive Filament during Write and Erase Cycles on Nanometer-Scale ReRAM Achieved by In-Situ TEM\",\"authors\":\"M. Kudo, M. Arita, Yasuo Takahashi, K. Ohba, Masayuki Shimuta, I. Fujiwara\",\"doi\":\"10.1109/IMW.2015.7150312\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper shows clear evidence that in-situ transmission electron microscopy (TEM) can be used as a powerful tool to analyze ReRAM operation. Reproducible resistive switching of 100k cycles in 30- or 70-nm Cu-Te CBRAMs was achieved for the first time during in-situ TEM observation. A TEM sample of the CBRAM cells was processed by a focused ion beam method. The formation and rupture of a Cu filament was observed and analyzed in the TEM with energy dispersive x-ray (EDX) mapping. Since the overshoot current at the resistive switching was efficiently suppressed by a MOSFET placed in the TEM holder, stable and reproducible ReRAM switching operations were achieved in the TEM.\",\"PeriodicalId\":107437,\"journal\":{\"name\":\"2015 IEEE International Memory Workshop (IMW)\",\"volume\":\"66 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Memory Workshop (IMW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMW.2015.7150312\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2015.7150312","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Visualization of Conductive Filament during Write and Erase Cycles on Nanometer-Scale ReRAM Achieved by In-Situ TEM
The paper shows clear evidence that in-situ transmission electron microscopy (TEM) can be used as a powerful tool to analyze ReRAM operation. Reproducible resistive switching of 100k cycles in 30- or 70-nm Cu-Te CBRAMs was achieved for the first time during in-situ TEM observation. A TEM sample of the CBRAM cells was processed by a focused ion beam method. The formation and rupture of a Cu filament was observed and analyzed in the TEM with energy dispersive x-ray (EDX) mapping. Since the overshoot current at the resistive switching was efficiently suppressed by a MOSFET placed in the TEM holder, stable and reproducible ReRAM switching operations were achieved in the TEM.
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