透明导电电极单-几层石墨烯的合成参数及转移技术

C. Kang, Z. A. Burhanudin, M. S. M. Saheed, N. M. Mohamed
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引用次数: 1

摘要

报道了用化学气相沉积(CVD)法制备的高质量石墨烯的性能。在合成过程中,气体流动的速率和时间等参数是变化的。然后利用单层和双层聚合物技术将生长的石墨烯转移到氧化硅衬底上。其次,利用光学显微镜、拉曼光谱、紫外可见光谱和四点探针测量对合成的单少层石墨烯的表面形貌、电学和光学性质进行了表征。结果表明,通过适当的合成参数和转移技术组合,可以获得电阻低至900 Ω/sq,光学透明度高达94%的高质量石墨烯。这种质量的石墨烯在发光二极管、太阳能电池和光学传感器等应用中是非常理想的透明导电电极。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis parameters and transfer techniques of mono-few layer graphene for transparent conductive electrode
Properties of high quality graphene synthesized using chemical vapor deposition (CVD) are reported. Parameters such as the rate and time of gas flow are varied during synthesis. The as-grown graphene is then transferred onto oxidized silicon substrate by employing single and double layer polymer-based techniques. Next, surface morphology, electrical and optical properties of the synthesized mono-few layer graphene are characterized using optical microscope, Raman spectroscopy, UV-VIS spectroscopy, and four-point probe measurement. Results show that by using the appropriate combination of synthesis parameters and transfer technique, high quality graphene with electrical sheet resistance as low as 900 Ω/sq and optical transparencies as high as 94% can be obtained. Such quality graphene is highly desirable as transparent conductive electrodes in applications like light emitting diodes, solar cells and optical sensors.
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