pMOST偏置温度不稳定性对电路可靠性性能的影响

Yung-Huei Lee, N. Mielke, B. Sabi, S. Stadler, R. Nachman, S. Hu
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引用次数: 36

摘要

本工作研究了pMOST偏置温度(BT)退化对逻辑产品速度(F/sub max/)和最小允许工作电压(V/sub ccmin/)的影响。氟植入物在聚蚀刻后和硬掩膜去除之前用于分离BT不稳定性影响和其他可靠性退化。提出了氟与器件和电路可靠性相互作用的物理机制和模型。建议在生产测试中使用F/sub max/和V/sub ccmin/的可靠性保护带,以确保在产品使用寿命期间可靠的逻辑产品性能和功能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of pMOST bias-temperature instability on circuit reliability performance
This work investigated the impact of pMOST bias-temperature (BT) degradation on logic product speed (F/sub max/) and minimum allowed operating voltage (V/sub ccmin/). Fluorine implants after poly etch and before hard-mask removal are utilized to separate out the BT instability effects from other reliability degradations. Physical mechanisms and models are proposed to explain the interaction of fluorine with device and circuit reliability. A reliability guardband in F/sub max/ and V/sub ccmin/ is recommended as part of the production testing to ensure reliable logic product performance and functionality during the product's lifetime.
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