Yung-Huei Lee, N. Mielke, B. Sabi, S. Stadler, R. Nachman, S. Hu
{"title":"pMOST偏置温度不稳定性对电路可靠性性能的影响","authors":"Yung-Huei Lee, N. Mielke, B. Sabi, S. Stadler, R. Nachman, S. Hu","doi":"10.1109/IEDM.2003.1269297","DOIUrl":null,"url":null,"abstract":"This work investigated the impact of pMOST bias-temperature (BT) degradation on logic product speed (F/sub max/) and minimum allowed operating voltage (V/sub ccmin/). Fluorine implants after poly etch and before hard-mask removal are utilized to separate out the BT instability effects from other reliability degradations. Physical mechanisms and models are proposed to explain the interaction of fluorine with device and circuit reliability. A reliability guardband in F/sub max/ and V/sub ccmin/ is recommended as part of the production testing to ensure reliable logic product performance and functionality during the product's lifetime.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"117 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"36","resultStr":"{\"title\":\"Effect of pMOST bias-temperature instability on circuit reliability performance\",\"authors\":\"Yung-Huei Lee, N. Mielke, B. Sabi, S. Stadler, R. Nachman, S. Hu\",\"doi\":\"10.1109/IEDM.2003.1269297\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work investigated the impact of pMOST bias-temperature (BT) degradation on logic product speed (F/sub max/) and minimum allowed operating voltage (V/sub ccmin/). Fluorine implants after poly etch and before hard-mask removal are utilized to separate out the BT instability effects from other reliability degradations. Physical mechanisms and models are proposed to explain the interaction of fluorine with device and circuit reliability. A reliability guardband in F/sub max/ and V/sub ccmin/ is recommended as part of the production testing to ensure reliable logic product performance and functionality during the product's lifetime.\",\"PeriodicalId\":344286,\"journal\":{\"name\":\"IEEE International Electron Devices Meeting 2003\",\"volume\":\"117 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"36\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Electron Devices Meeting 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2003.1269297\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269297","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of pMOST bias-temperature instability on circuit reliability performance
This work investigated the impact of pMOST bias-temperature (BT) degradation on logic product speed (F/sub max/) and minimum allowed operating voltage (V/sub ccmin/). Fluorine implants after poly etch and before hard-mask removal are utilized to separate out the BT instability effects from other reliability degradations. Physical mechanisms and models are proposed to explain the interaction of fluorine with device and circuit reliability. A reliability guardband in F/sub max/ and V/sub ccmin/ is recommended as part of the production testing to ensure reliable logic product performance and functionality during the product's lifetime.