cnt - fed电子束聚焦优化

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1109/IVNC.2004.1354884

J. Choi, A. Zoulkarneev, Y. Jin, Young Jun Park, D. Chung, B. K. Song, I. Han, Ha Jin Kim, H. Lee, S. H. Park, H. Kang, Mun Jin Shin, Ha Jong Kim, K. Min, Jung Woo Kim, J. Jung, J. M. Kim

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引用次数: 1

摘要

为了在38英寸高清晰度碳纳米管场发射器件(cnt - fed)中获得高颜色纯度，对电子束聚焦进行了优化。我们成功地采用了每个碳纳米管点与栅极和聚焦栅极孔对齐的聚焦结构，使电场对称，使电子束更容易聚焦。该结构还具有凹形几何。通过改变聚焦栅孔的尺寸，获得了最佳的I-V条件。即使在碳纳米管的宽电子束发散下，也能实现精细的电子束聚焦。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Optimization of electron beam focusing for CNT-FEDs

An electron beam focusing was optimized to obtain high color purity in 38" high definition level carbon nanotube-field emission devices (CNT-FEDs). We could successfully adopted the focusing structure where each CNT dot is aligned to a gate and a focus gate hole, which results in electric field symmetry and makes it easy to focus electron beam. The structure also has a concave geometry. By varying the sizes of the focus gate hole, the optimum I-V conditions are obtained. The fine electron beam focusing even under wide e-beam divergence of CNTs could be achieved.

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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