{"title":"利用广义Ramo-Shockley定理对短半导体器件的终端电流进行精确蒙特卡罗建模","authors":"P. Houlet, Y. Awano, N. Yokoyama, C. Hamaguchi","doi":"10.1109/IWCE.1998.742751","DOIUrl":null,"url":null,"abstract":"The authors present an efficient and simple method using a generalized formulation of the Ramo-Shockley theorem for the calculation of the time-dependent terminal currents in multi-port devices within the ensemble Monte Carlo modeling, including the displacement current and the separate contribution of each particle type. Moreover, our technique is optimized for the cloud-in-cell and box integration framework. We emphasize that our formulation does not require any additional optimization theory, is easy to implement and does not increase CPU time consumption.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Accurate Monte Carlo modeling of terminal currents in short semiconductor devices by using a generalized Ramo-Shockley theorem\",\"authors\":\"P. Houlet, Y. Awano, N. Yokoyama, C. Hamaguchi\",\"doi\":\"10.1109/IWCE.1998.742751\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors present an efficient and simple method using a generalized formulation of the Ramo-Shockley theorem for the calculation of the time-dependent terminal currents in multi-port devices within the ensemble Monte Carlo modeling, including the displacement current and the separate contribution of each particle type. Moreover, our technique is optimized for the cloud-in-cell and box integration framework. We emphasize that our formulation does not require any additional optimization theory, is easy to implement and does not increase CPU time consumption.\",\"PeriodicalId\":357304,\"journal\":{\"name\":\"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.1998.742751\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.1998.742751","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Accurate Monte Carlo modeling of terminal currents in short semiconductor devices by using a generalized Ramo-Shockley theorem
The authors present an efficient and simple method using a generalized formulation of the Ramo-Shockley theorem for the calculation of the time-dependent terminal currents in multi-port devices within the ensemble Monte Carlo modeling, including the displacement current and the separate contribution of each particle type. Moreover, our technique is optimized for the cloud-in-cell and box integration framework. We emphasize that our formulation does not require any additional optimization theory, is easy to implement and does not increase CPU time consumption.