K. Early, D. Tennant, D. Jeon, P. Mulgrew, A. MacDowell, O. Wood, G. Kubiak, D. Tichenor
{"title":"软x射线投影光刻用射线- pn抗蚀剂的表征","authors":"K. Early, D. Tennant, D. Jeon, P. Mulgrew, A. MacDowell, O. Wood, G. Kubiak, D. Tichenor","doi":"10.1364/sxray.1992.wc3","DOIUrl":null,"url":null,"abstract":"To be useful for integrated circuit (IC) manufacturing, a resist process must be capable of high throughput and exhibit good pattern transfer capability, as well as demonstrate high resolution. In 1990, imaging of 50 nm-wide lines and spaces in polymethyl methacrylate (PMMA) resist, using a 20× Schwarzschild optic at λ = 14 nm, was reported.1,2 PMMA has long been known for its extremely high resolution and good process latitude, but its low sensitivity and poor plasma etch resistance make it an unlikely candidate for an IC fabrication process.","PeriodicalId":409291,"journal":{"name":"Soft-X-Ray Projection Lithography","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization of Ray-PN Resist for Soft-X-Ray Projection Lithography\",\"authors\":\"K. Early, D. Tennant, D. Jeon, P. Mulgrew, A. MacDowell, O. Wood, G. Kubiak, D. Tichenor\",\"doi\":\"10.1364/sxray.1992.wc3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To be useful for integrated circuit (IC) manufacturing, a resist process must be capable of high throughput and exhibit good pattern transfer capability, as well as demonstrate high resolution. In 1990, imaging of 50 nm-wide lines and spaces in polymethyl methacrylate (PMMA) resist, using a 20× Schwarzschild optic at λ = 14 nm, was reported.1,2 PMMA has long been known for its extremely high resolution and good process latitude, but its low sensitivity and poor plasma etch resistance make it an unlikely candidate for an IC fabrication process.\",\"PeriodicalId\":409291,\"journal\":{\"name\":\"Soft-X-Ray Projection Lithography\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Soft-X-Ray Projection Lithography\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/sxray.1992.wc3\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Soft-X-Ray Projection Lithography","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/sxray.1992.wc3","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization of Ray-PN Resist for Soft-X-Ray Projection Lithography
To be useful for integrated circuit (IC) manufacturing, a resist process must be capable of high throughput and exhibit good pattern transfer capability, as well as demonstrate high resolution. In 1990, imaging of 50 nm-wide lines and spaces in polymethyl methacrylate (PMMA) resist, using a 20× Schwarzschild optic at λ = 14 nm, was reported.1,2 PMMA has long been known for its extremely high resolution and good process latitude, but its low sensitivity and poor plasma etch resistance make it an unlikely candidate for an IC fabrication process.
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