用于一级和二级充电的大功率隔离双向三端口DC-DC变换器

Snehalika, Ranjeeta Patel, C. Panigrahi, A. Rathore
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引用次数: 0

摘要

提出了一种基于氮化镓高电子迁移率晶体管(GaN HEMT)的三端口DC-DC变换器,用于一级和二级电动汽车充电。三端口转换器(TPC)基于隔离的双向双有源桥(IBDC-DAB)配置,用于电池充电应用。与单独的充电器系统相比,提出的基于DAB的TPC使用更少的组件。采用相移控制方法对具有两个充电输出端口的IBDC-DAB变换器的输出功率进行控制。当相移为0.3889时,转换器的最高效率为98.86%。输出端口2和3设计用于1级和2级EVB充电。输出端口2和3的最大功率约为2 kW的1级和12 kW的2级,总效率为97%。利用LTspice XVII软件对基于ibdcdab的TPC的性能指标进行了分析和仿真。最后给出了验证结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-Power Isolated Bidirectional Three-port DC-DC Converter for Level-1 and Level-2 Charging
This paper proposes a Gallium Nitride high-electron mobility transistor (GaN HEMT) based three-port DC-DC converter for Level-1 and Level-2 electric vehicle charging. The three-port converter (TPC) is based on an isolated bidirectional Dual Active Bridge (IBDC-DAB) configuration for battery charging applications. The proposed DAB based TPC uses fewer components as compared to separate charger systems. The phase-shift control method is implemented to control the output power of the IBDC-DAB based converter with two charging output ports. The highest efficiency of 98.86% is achieved with the proposed converter at a phase-shift of 0.3889. The output ports 2 and 3 are designed for Level-1 and Level-2 EVB charging. Maximum power of approximately 2 kW for Level-1 and 12 kW for Level-2 is achieved for output Port 2 and 3 at an overall efficiency of 97%. The performance metrics of the IBDCDAB-based TPC have been analyzed and simulation is performed using LTspice XVII software. The results are presented for validation.
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