高尺度GaN hemt中短通道效应的理论研究

2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2012-11-01 DOI:10.1109/RFIT.2012.6401661

Haifeng Sun, K. B. Lee, Li Yuan, Weizhu Wang, S. L. Selvaraj, G. Lo

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引用次数: 6

摘要

为了研究高尺度晶体管中短沟道效应的机理，对AlGaN/GaN hemt进行了二维模拟。我们展示了改变势垒厚度和栅极长度的影响，并表明大于10的高宽高比(栅极长度与势垒厚度)可以有效地缓解短通道效应。我们还展示了InGaN通道和肖特基接触的功函数对短通道效应的影响。

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Theoretical study of short channel effect in highly scaled GaN HEMTs

2-D simulation of AlGaN/GaN HEMTs was carried out in order to investigate the mechanism of short-channel effect in highly scaled transistors. We demonstrate the impact of varying the barrier thickness as well as the gate lengths and show that high aspect ratio (gate length to barrier thickness) larger than 10 can effectively mitigate the short channel effect. We also show the influence of InGaN channel and the work-function of Schottky contacts on short channel effects.

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2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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