采用对称三维射频集成电感的CMOS超宽带低噪声放大器(UWB-LNA

2013 IEEE International Conference on Ultra-Wideband (ICUWB) Pub Date : 2013-11-14 DOI:10.1109/ICUWB.2013.6663860

K. Yousef, H. Jia, R. Pokharel, A. Allam, M. Ragab, H. Kanaya, K. Yoshida

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引用次数: 5

摘要

本文介绍了一种2- 16ghz超宽带低噪声放大器的设计。所提出的超宽带LNA采用对称的3D射频集成电感。UWB LNA增益为11±1.0 dB, NF小于3.25 dB。在工作频带内实现了良好的输入和输出阻抗匹配和良好的隔离。所提出的超宽带LNA由1.8V电源驱动。该超宽带LNA采用标准的0.18 μm CMOS技术进行设计和仿真。

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CMOS ultra-wideband low noise amplifier (UWB-LNA) using symmetric 3D RF integrated inductor

This paper presents the design of a 2-16 GHz ultra wideband low noise amplifier (UWB LNA). The proposed UWB LNA employs a symmetric 3D RF integrated inductor. The UWB LNA has a gain of 11 ± 1.0 dB with NF less than 3.25 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8V supply. This UWB LNA is designed and simulated in the standard 0.18 μm CMOS technology.

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2013 IEEE International Conference on Ultra-Wideband (ICUWB)

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