N. Stojadinovic, S. Djoric-Veljkovic, V. Davidovic, I. Manic, S. Golubovic
{"title":"应用于通信卫星的功率mosfet中的γ辐照效应","authors":"N. Stojadinovic, S. Djoric-Veljkovic, V. Davidovic, I. Manic, S. Golubovic","doi":"10.1109/TELSKS.2001.955805","DOIUrl":null,"url":null,"abstract":"The effects of pre-irradiation elevated-temperature bias stressing on the radiation response of power VDMOSFETs have been investigated. Larger irradiation induced threshold voltage shift in stressed, and more considerable mobility reduction in unstressed devices have been observed. The underlying changes of gate oxide-trapped charge and interface trap densities have been calculated and analysed in terms of the mechanisms responsible for pre-irradiation stress effects.","PeriodicalId":253344,"journal":{"name":"5th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service. TELSIKS 2001. Proceedings of Papers (Cat. No.01EX517)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Gamma-irradiation effects in power MOSFETs for application in communication satellites\",\"authors\":\"N. Stojadinovic, S. Djoric-Veljkovic, V. Davidovic, I. Manic, S. Golubovic\",\"doi\":\"10.1109/TELSKS.2001.955805\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effects of pre-irradiation elevated-temperature bias stressing on the radiation response of power VDMOSFETs have been investigated. Larger irradiation induced threshold voltage shift in stressed, and more considerable mobility reduction in unstressed devices have been observed. The underlying changes of gate oxide-trapped charge and interface trap densities have been calculated and analysed in terms of the mechanisms responsible for pre-irradiation stress effects.\",\"PeriodicalId\":253344,\"journal\":{\"name\":\"5th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service. TELSIKS 2001. Proceedings of Papers (Cat. No.01EX517)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"5th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service. TELSIKS 2001. Proceedings of Papers (Cat. No.01EX517)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TELSKS.2001.955805\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"5th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service. TELSIKS 2001. Proceedings of Papers (Cat. No.01EX517)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TELSKS.2001.955805","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Gamma-irradiation effects in power MOSFETs for application in communication satellites
The effects of pre-irradiation elevated-temperature bias stressing on the radiation response of power VDMOSFETs have been investigated. Larger irradiation induced threshold voltage shift in stressed, and more considerable mobility reduction in unstressed devices have been observed. The underlying changes of gate oxide-trapped charge and interface trap densities have been calculated and analysed in terms of the mechanisms responsible for pre-irradiation stress effects.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
