Fabrication of EDLTs to electrochemically control metal-insulator transition in VO2

Electron-electron interactions in transition metal oxides can enable novel macroscopic properties like metal-to-insulator transitions. Using such materials in field effect transistors can potentially enhance the current state-of-the-art devices by providing unique means to overcome their conventional limits. Deposition of high quality thin films and the device fabrication technique play an important role in the device response to an electric field. In this work, we present the deposition of high quality thin films of Vanadium dioxide (V02) and a complete device fabrication protocol for an electric double-layer transistor (EDL T) using VO2 as the channel material. Further, we discuss the electric field-induced metal-to-insulator transition (E-MIT) in the VO2 thin film.