基于dropcast PVA纳米复合材料的ReRAM存储器

2019 Open Innovations (OI) Pub Date : 2019-10-01 DOI:10.1109/OI.2019.8908219

Charlton Uwa Aigbekaen, S. Vallabhapurapu, Issac O Osunmakinde

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引用次数: 0

摘要

用铝掺杂氧化锌(AZO)纳米颗粒滴铸在铝带上，观察到PVA的电阻开关记忆行为。大约4个数量级的开/关比鼓励并导致了ReRAM存储单元的发展。开关前后不同节段的传导机制表明所涉及的活化能有明显的变化。

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ReRAM memory based on dropcast PVA nano composite

A resistive switching memory behavior has been observed in PVA incorporated with Aluminium doped Zinc Oxide (AZO) nano particles drop cast on Alumiuium tape. An ON/OFF ratio of about 4 orders of magnitude encourages and leads to the development of ReRAM memory cell. The conduction mechanisms of different segments before and after switching has indicated a clear change of activation energies involved.

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2019 Open Innovations (OI)

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