L. Gu, W. Feng, Zhu Liu, Shijun Tang, Tao Chen, W. Che
{"title":"一种x波段500W内部匹配的高功率GaN放大器","authors":"L. Gu, W. Feng, Zhu Liu, Shijun Tang, Tao Chen, W. Che","doi":"10.1109/IEEE-IWS.2019.8804032","DOIUrl":null,"url":null,"abstract":"In this paper the design, implementation, and experimental results of an X-band 500W GaN-HEMT power amplifier (PA) are presented. The device consists of four GaN power dies of 18-mm gate periphery together with input and output 2-stage impedance transformer networks. The device exhibited saturated output power of 500 W with power gain of 9.0 dB over the frequency range of 8.2-8.8 GHz, operating at 50 V drain voltage under pulsed condition of 50us pulse width and 5% duty ratio. In addition, the highest saturated output power reached 580 W with power gain of 9.6 dB at 8.5 GHz. This is the highest output power GaN HEMT ever reported for X-band.","PeriodicalId":306297,"journal":{"name":"2019 IEEE MTT-S International Wireless Symposium (IWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"An X-band 500W Internally Matched High Power GaN Amplifier\",\"authors\":\"L. Gu, W. Feng, Zhu Liu, Shijun Tang, Tao Chen, W. Che\",\"doi\":\"10.1109/IEEE-IWS.2019.8804032\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the design, implementation, and experimental results of an X-band 500W GaN-HEMT power amplifier (PA) are presented. The device consists of four GaN power dies of 18-mm gate periphery together with input and output 2-stage impedance transformer networks. The device exhibited saturated output power of 500 W with power gain of 9.0 dB over the frequency range of 8.2-8.8 GHz, operating at 50 V drain voltage under pulsed condition of 50us pulse width and 5% duty ratio. In addition, the highest saturated output power reached 580 W with power gain of 9.6 dB at 8.5 GHz. This is the highest output power GaN HEMT ever reported for X-band.\",\"PeriodicalId\":306297,\"journal\":{\"name\":\"2019 IEEE MTT-S International Wireless Symposium (IWS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE MTT-S International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEEE-IWS.2019.8804032\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2019.8804032","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An X-band 500W Internally Matched High Power GaN Amplifier
In this paper the design, implementation, and experimental results of an X-band 500W GaN-HEMT power amplifier (PA) are presented. The device consists of four GaN power dies of 18-mm gate periphery together with input and output 2-stage impedance transformer networks. The device exhibited saturated output power of 500 W with power gain of 9.0 dB over the frequency range of 8.2-8.8 GHz, operating at 50 V drain voltage under pulsed condition of 50us pulse width and 5% duty ratio. In addition, the highest saturated output power reached 580 W with power gain of 9.6 dB at 8.5 GHz. This is the highest output power GaN HEMT ever reported for X-band.
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